Publications

1. " Molecular Electronics- an Overview"
   

   S. Richter ,Invited Review, Nano2life European network publications (to be published)

   
   
2. Special Presentation: Application of Scanning Probe Microscopy for electrical Measurements of III-V devices
   

   Shachar Richter (available on videotape- about 90 min.)

   
   
3. Influence of Junction-containing Alkanethiols on Schottky Barrier Height at the Hg/WSe2 Interface, submitted for publication.
   

   S. Verleger, N. Rosenberg, M. Gozin and S. Richter

   
   
4. Construction of Dithiol-Based Sandwich Structures Using Monolayer-Exchange Process, submitted for publication.
   

   G. Meshulam, N. Rosenberg, A. Caster, L. Burstein, M. Gozin and S. Richter

   
   
5. Scanning probe studies of defect dominated electronic transport in GaN.
   

   Hsu, J. W. P.; Lang, D. V.; Manfra, M. J.; Richter, S.; Chu, S. N. G.; Sergent, A. M.; Kleiman, R. N.; Pfeiffer, L. N.; Molnar, R. J. Proceedings - Electrochemical Society (2001), 2001-1(III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Four th State-of-the-Art-Program on Compound Semiconductors, 2001), 37-50.

   
   
6. Spatial Variation of Electrical Properties in Lateral Epitaxial Overgrown GaN
   

   J. W. P. Hsu, D. V. Lang, M. J. Matthews, S. Richter, D. Abusch-Magder, R. N. Kleiman, S. L. Gu and T. F. Kuech. Appl. Phys. Lett 79, 761(2001).

   
   
7. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
   

   J.W.P Hsu,.; M.J Manfra,.; D.V Lang,.; S Richter,.; S.N.G Chu,.; A.M Sergent,.; R.N Kleiman,.; L.N Pfeiffer,.; R.J Molnar,. Appl. Phys. Lett.. 78, 1685 (2001).

   
   
8. Nature of the highly conducting interfacial layer in GaN films
   

   Hsu, J.W.P.; Lang, D.V.; Richter, S.; Kleiman, R.N.; Sergent, A.M.; Molnar, R.J. Appl. Phys. Lett. 77,2873 (2000).

   
   
9. Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
   

   JWP Hsu, DV Lang, S Richter, RN Kleiman, AM Sergent, DC Look, RJ Molnar J ELECTRON MATER 30 (3): 115 (2001).

   
   
10. Metal-Insulator-semiconductor tunneling microscopy: Two-dimensional dopant profiling of semiconductors with conducting atomic-force microscopy
    

    S. Richter, M. Geva, J. P. Garno and R. N. Kleiman. Appl. Phys. Lett. 77 456 (2000).

    
    
11. Characterization of InP using Metal-Insulator Semiconductor Tunneling microscopy
    

    S. Richter, J.P. Garno, M. Geva and R. N. Kleiman. Proceeding of IPRM(IEEE), p.64 (Williamsburg 2000).

    
    
12. SSRM analysis os Dopant diffusion in InP-Based structures
    

    M. Geva,, Y. Akulova, A. Ougazzaden, J. P. Holman, S. Richter and R.N. Kleiman Proceeding of IPRM (IEEE), p.48 (Williamsburg 2000).

    
    
13. Bulk changes in Semiconductors using Scanning Probe Microscope: A way to nm-sized fabricated structures
    

    S. Richter, Y. Manassen, D. Cahen, Phys. Rev. B 59: (16) 10877 (1999).

    
    
14. Growth of CuInSe2 crystals by the traveling Heater Method and their characterization.
    

    V. Lyakhovitskaya, S. Richter, Y. Manassen and D. Cahen, J. Cryst. Growth. 197: (1-2) 177 (1999).

    
    
15. Fabrication and Detection of Bulk, Sub-mm Semiconductor Device Structures using Scanning Probe Microscopy.
    

    S. Richter, V. Lyakhvitskaya, S.Cohen, K. Gartsman D. Cahen and Y. Manassen .Appl. Phys. Lett. 73,1868 (1998) .

    
    
16. Sub-mm semiconductor Device Structures in CuInSe2
    

    S. Richter V. Lyakhvitskaya , S. Cohen K. Gartsman D. Cahen and Y. Manassen. Inst. Phys. Conf. Ser. 152, 943(1998).

    
    
17. Growth and Characterization of Twin-free CuInSe2 Crystals by the Traveling Heater Method
    

    V.Lyakohvitskaya, S. Richter, Y. Manassen and D.Cahen. Inst. Phys. Conf. Ser., 152, 103(1998).

    
    
18. Electronic effects of ion mobility in semiconductors: Mixed electronic-ionic behavior and device creation in Si:Li.
    

    L. Chernyak, V. Lyakhovitskaya S. Richter, A. Jakubowicz, S. Cohen and D. Cahen J. Appl. Phys 80(5) 2749(1996)

    
    
19. Aspect of molecular imaging with scanning tunneling microscope
    

    S. Richter and Y. Manassen J.Phys. Chem 98(11) 2941 (1994).

    
    
20. Electron spin resonance-scanning tunneling microscopy experiments of thermally oxidized Si(111)
    

    Y.Manassen, E Ter-Ovenesyan, D. Shachal and S. Richter Pys. Rev. B 48 4887 (1993).