Electron
microscopes
·
ESEM
·
HRSEM (Equipment: JSM-6700 Field
Emission Scanning Electron Microscope)
·
FIB (Raith ionLine)
AFM/STM
·
Molecular Imaging PicoSPM
II system
·
Veeco NanoScope
IV MultiMode AFM
·
Variable Temperature Ultra-High
Vacuum Scanning Probe Microscopy System
Optical microscopy
Metallurgical Confocal microscope (LEXT)
Ebeam Lithography
·
E-beam lithography (Raith 150 Ultra High Precision E-Beam Lithography and
Metrology System)
·
JEOL JSM-6400 Research Grade SEM
Photolithography
·
Contact lithography (Suss MA6, MJB3)
·
Direct laser writing (
·
Photomask preparation (
·
Nanoimprint lithography (S.E.T.
FC-150)
Thin film
deposition/etching/characterization
·
FIB deposition
·
E-beam deposition (VST)
·
Thermal evaporation (VST)
·
RF sputtering (MRC)
·
RIE Etching
·
DRIE etching
·
Wet etching
·
Wet and dry Cleaning
·
Measurements:
Backend
·
Dicing (Disco DAD 3350)
·
Wire Bonding
·
Precision Diamond Scriber (ATV)
For more details, please contact Mr. Mark
Oksman (oksman@post.tau.ac.il) or
Dr. Nava Ariel-Sternberg (anava@tauex.tau.ac.il)
Processes
Unless otherwise noted, processes can be
performed either by lab personnel (for extra fee) or by trained users.
For most processes the user must be familiar
with the equipment to operate it by him/herself.
Cleaning
·
With solvents
·
With acid and basic solutions (RCA,
Piranha, Nanostrip)
Photolithography
·
Contact lithography using MA6 and
MJB3 Karl Suss Mask Aligners:
·
Mask sizes: 3"x3",
4"x4", 5"x5", 7"x7"
·
Substrate sizes: small pieces, wafers
3", 4", 6", 8" diameter (for 8" wafers exposed area
will be only 6")
·
Direct laser writing on big
substrates
·
Nanoimprint lithography (S.E.T.
FC-150)
Photomask Preparation
Mask preparation by Heidelberg Instruments
DWL66 Laser Writer, 1 micron resolution, 4"x4" and 5"x5"
Soda Lime or Quartz Low Reflective Chrome photomasks.
Film deposition
·
PVD by e-beam evaporation and by RF
Sputtering.
·
PECVD
·
Electroplating
Etching
·
Chemical wet etching of Cr, Au, Au,
Ti films
·
Anisotropic Si wet etching
·
Plasma Etching of SiO2, Si3N4,
Photoresist films, Quartz and Fused Silica bulk samples by HDP/RIE Nextral 860. Sample size: from small pieces to 8" wafers
·
DRIE of Si by Bosch process in ICP
DRIE PlasmaTherm SLR 770 machine
·
Etching of small Si features for nanophotonics by RIE process
·
Photoresist ashing
·
FIB etching
Measurements
·
Profile/Step height
·
Optical Microscopes
·
Spectroscopic Ellipsometer
·
Spectroscopic Reflectometer
Dicing
Dicing of Si and
LiNbO3 samples up to 6" diameter by Disco DAD 3350 dicing saw.